|本期目录/Table of Contents|

[1]卢园,李瑞娟,赵娜,等.硅对镉胁迫下玉米生长和抗氧化防御系统的影响[J].江苏农业科学,2023,51(20):77-84.
　Lu Yuan,et al.Impacts of silicon on growth and antioxidant defense system of maize under cadmium stress[J].Jiangsu Agricultural Sciences,2023,51(20):77-84.
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硅对镉胁迫下玉米生长和抗氧化防御系统的影响(PDF)
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《江苏农业科学》[ISSN:1002-1302/CN:32-1214/S]

卷:
第51卷
期数:
2023年第20期
页码:
77-84
栏目:
遗传育种与耕作栽培
出版日期:
2023-10-20

文章信息/Info

Title:
Impacts of silicon on growth and antioxidant defense system of maize under cadmium stress
作者:
卢园; 李瑞娟; 赵娜; 张盼; 李霄霄; 吴佳文
延安大学生命科学学院，陕西延安 716000
Author(s):
Lu Yuan; et al
关键词:
玉米; 镉; 硅; 抗氧化系统; 缓解
Keywords:
-
分类号:
S513.01
DOI:
-
文献标志码:
A
摘要:
为探究硅(Si)对镉(Cd)胁迫下玉米的缓解机制，本研究以玉米幼苗为试验材料，分析Cd污染已经存在后，外源施加Si对玉米的缓解作用。以水培法添加5 μmol/L Cd胁迫20 d后，外源施加1 mmol/L Si溶液，添加Si 处理 7 d 后，测定玉米的生物量、Cd浓度、Cd积累量和Cd转运速率(TF)、活性氧［包括过氧化氢(H2O2)和超氧阴离子(O-2·)］含量、总抗氧化能力和抗氧化酶［包括超氧化物歧化酶(SOD)、过氧化物酶(POD)和过氧化氢酶(CAT)］活性，以及非酶类抗氧化物质［包括抗坏血酸(AsA)和还原性谷胱甘肽(GSH)］含量。结果表明，Cd胁迫对玉米地上部和根系鲜质量以及H2O2和O-2·含量均未有显著性影响，表示玉米有较强的Cd耐受性。施加Si较不施加Si显著地降低了玉米地上部的Cd浓度和Cd积累量，分别降低了44.14%和39.08%；Cd TF降低了35.78%。在叶片中，Cd胁迫下施加Si没有改变玉米的总抗氧化能力、CAT活性、SOD活性、GSH含量和AsA含量，但是加Si显著降低了叶片POD活性。在根系中，Cd胁迫下施加Si显著减少了H2O2含量，POD活性和GSH含量也显著降低。综上，玉米对Cd胁迫有较高的耐受性，而且已经遭受Cd胁迫后再外源施加Si仍能显著降低玉米体内的Cd浓度，减缓Cd污染对玉米生长的潜在危害。
Abstract:
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备注/Memo

备注/Memo:
收稿日期：2022-12-28
基金项目：延安大学博士科研启动项目(编号：YDBK2019-17)；延安大学科学研究专项(编号：YDY2019-27)；陕西省大学生创新创业训练计划项目(编号：S202110719126)。
作者简介：卢园(1999—)，男，江西金溪人，硕士研究生，主要从事植物营养生理及分子机制研究。E-mail：1186112604@qq.com。
通信作者：吴佳文，博士，副教授，硕士生导师，主要从事植物营养与抗逆机制研究。E-mail：wujiawende@126.com。
更新日期/Last Update: 2023-10-20